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      2100-HF Unit Reverse V oltage: 20 to 100 Volts Forward Current: 2.0 Amp RoHS Device Halogen free Dimensions in inches and (millimeter) CDBM220-HF Thru CDBM2100-HF Page 1 QW-JB003 SMD Schottky Barrier Rectifiers REV:A Comchip Technology CO., LTD. Mini SMA/SOD-123 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. 0.071(1.8) 0.055(1.4) 0.126(3.2) 0.110(2.8) 0.067(1.7) 0.051(1.3) 0.035(0.9) Typ. 0.035(0.9) Typ. CDBM CDBM 240-HF 250-HF 260-HF 280-HF CDBM 14 20 30 21 30 60 42 60 50 0.5 10 85 160 80 56 80 220-HF 230-HF Features Mechanical data -Case: Molded plastic, JEDEC MiniSMA/SOD-123. -W eight:0.027 gram(approx.). -Batch process design, excellent powe dissipation of fers better reverse leakage current and thermal resistance. -Low profile surface mounted application in order to optimize board space. -T iny plastic SMD package. -Low power loss, high ef ficiency. -High current capability , low forward voltage dorp. -High surge capability . -Guardring for overvoltage protection. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any Parameter Symbol CDBM 20 CDBM 100 70 100 CDBM 28 40 50 35 50 CDBM 40 Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=2.0A Forward rectified current VRRM VRMS VR VF IO 0.70 0.50 0.85 2.0 Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature IFSM IR RθJA CJ TJ TSTG Reverse current on VR=VRRM @TA=25 O C @TA=125 O C Note 1: f=1MHz and applied 4V DC reverse voltage. -55 to +125 -55 to +150 -65 to +175 V V V V A A mA pF O C O C O C/W Maximum Ratings (at TA=25°C unless otherwise noted) |